Linear patterns were spontaneously formed on the silica and titania dip-coating films prepared from tetramethyl orthosilicate (Si(OCH 3 ) 4 ) and titanium tetraisopropoxide (Ti(OC 3 H 7 i ) 4 ) solutions, respectively. In both films, the pattern formation occurred at extremely low substrate withdrawal speeds below 1.0 cm min 21 , where the film thickness increased with decreasing substrate withdrawal speed for dip-coating. The linear patterns on micrometre scale were arranged perpendicular to the substrate withdrawal direction. The values of R Z (10 point height of irregularities) and S (mean spacing of local peaks) of the patterns increased with decreasing substrate withdrawal speed. |
